Rainbow-electronics AT25DF081 Uživatelský manuál

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Features
Single 1.65V - 1.95V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
66 MHz Maximum Clock Frequency
Flexible, Uniform Erase Architecture
4-Kbyte Blocks
32-Kbyte Blocks
64-Kbyte Blocks
Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
Sixteen 64-Kbyte Physical Sectors
Hardware Controlled Locking of Protected Sectors
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
7 mA Active Read Current (Typical)
8 µA Deep Power-Down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil wide)
8-contact Ultra Thin DFN (5 mm x 6 mm x 0.6 mm)
11-ball dBGA (WLCSP)
1. Description
The AT25DF081 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF081, with its erase granularity as small as 4-Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
The physical sectoring and the erase block sizes of the AT25DF081 have been opti-
mized to meet the needs of today's code and data storage applications. By optimizing
the size of the physical sectors and erase blocks, the memory space can be used
much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused
memory space that occurs with large sectored and large block erase Flash memory
devices can be greatly reduced. This increased memory space efficiency allows addi-
tional code routines and data storage segments to be added while still maintaining the
same overall device density.
8-megabit
1.65-volt
Minimum
SPI Serial Flash
Memory
AT25DF081
3674E–DFLASH–8/08
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Shrnutí obsahu

Strany 1 - 1. Description

Features• Single 1.65V - 1.95V Supply• Serial Peripheral Interface (SPI) Compatible– Supports SPI Modes 0 and 3• 66 MHz Maximum Clock Frequency• Flexi

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103674E–DFLASH–8/08AT25DF081Figure 8-1. Byte ProgramFigure 8-2. Page Program8.2 Block EraseA block of 4K-, 32K-, or 64K-bytes can be erased (all bits

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113674E–DFLASH–8/08AT25DF081If the address specified by A23-A0 points to a memory location within a sector that is in the pro-tected state, then the B

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123674E–DFLASH–8/08AT25DF081ter be polled rather than waiting the tCHPEtime to determine if the device has finished erasing. Atsome point before the e

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133674E–DFLASH–8/08AT25DF0819.2 Write DisableThe Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Reg-ister to th

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143674E–DFLASH–8/08AT25DF081A0 will be set to the logical “1” state, and the sector itself will then be protected from programand erase operations. In

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153674E–DFLASH–8/08AT25DF081As a safeguard against accidental or erroneous locking or unlocking of sectors, the Sector Pro-tection Registers can thems

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163674E–DFLASH–8/08AT25DF081Essentially, if the SPRL bit of the Status Register is in the logical “0” state (Sector ProtectionRegisters are not locked

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173674E–DFLASH–8/08AT25DF081If the desire is to only change the SPRL bit without performing a Global Protect or Global Unpro-tect, then the system can

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183674E–DFLASH–8/08AT25DF081Figure 9-5. Read Sector Protection Register9.7 Protected States and the Write Protect (WP) PinThe WP pin is not linked to

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193674E–DFLASH–8/08AT25DF081The tables below detail the various protection and locking states of the device.Note: 1. “n” represents a sector numberTab

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23674E–DFLASH–8/08AT25DF081The AT25DF081 also offers a sophisticated method for protecting individual sectors againsterroneous or malicious program an

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203674E–DFLASH–8/08AT25DF08110. Status Register Commands10.1 Read Status RegisterThe Status Register can be read to determine the device’s ready/busy

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213674E–DFLASH–8/08AT25DF08110.1.1 SPRL BitThe SPRL bit is used to control whether the Sector Protection Registers can be modified or not.When the SPR

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223674E–DFLASH–8/08AT25DF081• Write Disable operation completes successfully• Write Status Register operation completes successfully or aborts• Protec

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233674E–DFLASH–8/08AT25DF081The complete one byte of data must be clocked into the device before the CS pin is deasserted,and theCS pin must be deasse

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243674E–DFLASH–8/08AT25DF081Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and putthe SO pin into a high-impedanc

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253674E–DFLASH–8/08AT25DF08111.2 Deep Power-DownDuring normal operation, the device will be placed in the standby mode to consume less poweras long as

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263674E–DFLASH–8/08AT25DF08111.3 Resume from Deep Power-DownIn order exit the Deep Power-Down mode and resume normal device operation, the Resumefrom

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273674E–DFLASH–8/08AT25DF08111.4 HoldThe HOLD pin is used to pause the serial communication with the device without having to stopor reset the clock s

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283674E–DFLASH–8/08AT25DF08112. Electrical Specifications12.1 Absolute Maximum Ratings*Temperature Under Bias ... -55C to

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293674E–DFLASH–8/08AT25DF081Notes: 1. Not 100% tested (value guaranteed by design and characterization).2. 15 pF load at 66 MHz, 30 pF load at 60 MHz.

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33674E–DFLASH–8/08AT25DF0812. Pin Descriptions and PinoutsTable 2-1. Pin DescriptionsSymbol Name and FunctionAssertedState TypeCSCHIP SELECT: Assertin

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303674E–DFLASH–8/08AT25DF081Notes: 1. Not 100% tested (value guaranteed by design and characterization).12.7 Input Test Waveforms and Measurement Leve

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313674E–DFLASH–8/08AT25DF08113. AC WaveformsFigure 13-1. Serial Input TimingFigure 13-2. Serial Output TimingFigure 13-3.HOLD Timing – Serial InputCSS

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323674E–DFLASH–8/08AT25DF081Figure 13-4. HOLD Timing – Serial OutputFigure 13-5. WP Timing for Write Status Register Command When SPRL = 1CSSISCKSOtHH

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333674E–DFLASH–8/08AT25DF08114. Ordering Information14.1 Ordering Code Detail – Standard Package OfferingsNotes: 1. The shipping carrier option code i

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343674E–DFLASH–8/08AT25DF08114.3 Ordering Code Detail – Wafer Level OptionsNotes: 1. Die/wafer carrier option code is not marked on devices.2. Please

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353674E–DFLASH–8/08AT25DF08115. Packaging Information15.1 8S1 – JEDEC SOICDRAWING NO. REV. TITLE GPCCOMMON DIMENSIONS(Unit of Measure = mm)SYMBOLMINN

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363674E–DFLASH–8/08AT25DF08115.2 8MA1 – UDFNTITLEDRAWING NO.GPCREV.Package Drawing Contact:[email protected] YFG D 8MA1, 8-pad (5 x 6 x 0.6

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373674E–DFLASH–8/08AT25DF08116. Revision HistoryRevision Level – Release Date HistoryA – September 2007 Initial releaseB – October 2007Changed part nu

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Corporate OfficeCalifornia | USAAdesto Headquarters1250 Borregas AvenueSunnyvale, CA 94089 Phone: (+1) 408.400.0578Email: [email protected]© 2012

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43674E–DFLASH–8/08AT25DF0813. Block Diagram4. Memory ArrayTo provide the greatest flexibility, the memory array of the AT25DF081 can be erased in four

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53674E–DFLASH–8/08AT25DF081Figure 4-1. Memory Architecture DiagramInternal Sectoring for 64KB 32KB 4KB 1-256 ByteSector Protection Block Erase Block E

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63674E–DFLASH–8/08AT25DF0815. Device OperationThe AT25DF081 is controlled by a set of instructions that are sent from a host controller, com-monly ref

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73674E–DFLASH–8/08AT25DF081Table 6-1. Command ListingCommand Opcode Address Bytes Dummy Bytes Data BytesRead CommandsRead Array 0Bh 0000 1011 3 1 1+Re

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83674E–DFLASH–8/08AT25DF0817. Read Commands7.1 Read ArrayThe Read Array command can be used to sequentially read a continuous stream of data fromthe d

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93674E–DFLASH–8/08AT25DF0818. Program and Erase Commands8.1 Byte/Page ProgramThe Byte/Page Program command allows anywhere from a single byte of data

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