Rainbow-electronics BR24L08FVM-W Uživatelský manuál stáhnout pdf

BR24L08-W / BR24L08F-W / BR24L08FJ-W

Memory ICs BR24L08FV-W / BR24L08FVM-W

1/25

1024×8 bit electrically erasable PROM

BR24L08-W / BR24L08F-W / BR24L08FJ-W /

BR24L08FV-W / BR24L08FVM-W

The BR24L08-W series is 2-wire (I

C BUS type) serial EEPROMs which are electrically programmable.

∗ I

C BUS is a registered trademark of Philips.

zApplications

General purpose

zFeatures

1) 1024 registers × 8 bits serial architecture.

2) Single power supply (1.8V to 5.5V).

3) Two wire serial interface.

4) Self-timed write cycle with automatic erase.

5) 16byte Page Write mode.

6) Low power consumption.

Write

(5V) : 1.5mA (Typ.)

Read (5V) : 0.2mA (Typ.)

Standby (5V) : 0.1µA (Typ.)

7) DATA security

Write protect feature (WP pin).

Inhibit to WRITE at low V

CC.

8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8

9) High reliability EEPROM with Double-Cell structure.

10) High reliability fine pattern CMOS technology.

11) Endurance : 1,000,000 erase / write cycles

12) Data retention : 40 years

13) Filtered inputs in SCL

•SDA for noise suppression.

14) Initial data FFh in all address.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Supply voltage −0.3 to +6.5 V

Power dissipation mW

Storage temperature

−65 to +125

°C

Operating temperature

°C

Terminal voltage

−

−40 to +85

−0.3 to VCC+0.3

Tstg

Topr

∗1

450(SOP-J8)

450(SOP8)

800(DIP8)

∗2

∗3

∗4

300(SSOP-B8)

∗1 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.

∗2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.

∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.

∗4 Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.

310(MSOP8)

1 2 3 4 5 6 ... 24 25

Shrnutí obsahu

Strany 1 - BR24L08FV-W / BR24L08FVM-W

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 1/25 10

Strany 2 - CC=1.8 to 5.5V)

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 10/25

Strany 3

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 11/25

Strany 4 - BR24L08FVM-W

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 12/25

Strany 5

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 13/25

Strany 6 - Fig.5 WRITE CYCLE TIMING

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 14/25

Strany 7 - WR. ( See Fig.6 (a) )

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 15/25

Strany 8 - A2 P1 P01010 R / W

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 16/25

Strany 9 - (IC OUTPUT DATA)

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 17/25

Strany 10

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 18/25

Strany 11 - 00A2 P1 P0 D7 D0

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 19/25

Strany 12 - D7 D7D0 D0

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 2/25 z

Strany 13 - Fig.13 WP EFFECTIVE TIMING

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 20/25

Strany 14 - START START

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 21/25

Strany 15 - WR=5ms

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 22/25

Strany 16 - CONDITION

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 23/25

Strany 17

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 24/25

Strany 18

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 25/25

Strany 19

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 3/25 z

Strany 20 - PRINT BASE

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 4/25 z

Strany 21

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 5/25 z

Strany 22 - OUTPUT LEAK CURRENT : I

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 6/25 z

Strany 23 - SUPPLY VOLTAGE : V

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 7/25 z

Strany 24 - Fig.43 Write cycle time t

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 8/25 z

Strany 25 - Fig.49 WP high period t

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 9/25 6

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