Rainbow-electronics TSM15N50 Uživatelský manuál stáhnout pdf

TSM15N50

500V N-Channel Power MOSFET

1/10

Version: A12

220

ITO

220

PRODUCT SUMMARY

(V) R

DS(on)

(Ω) I

(A)

500 0.44 @ V

=10V 14

General Description

The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half

bridge.

Features

● Low R

DS(ON)

0.44Ω (Max.)

● Low gate charge typical @ 39nC (Typ.)

● Improve dv/dt capability

Block Diagram

N-Channel MOSFET

Ordering Information

Part No. Package

Packing

TSM15N50CZ C0 TO-220 50pcs / Tube

TSM15N50CI C0 ITO-220 50pcs / Tube

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

500 V

Gate-Source Voltage V

±30 V

Continuous Drain Current(T

=25 )℃ I

14 A

Pulsed Drain Current * I

56 A

Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns

Single Pulse Avalanche Energy (Note 2) E

630 mJ

Avalanche Current (Repetitive) (Note 1) I

14 A

Repetitive Avalanche Energy (Note 1) E

23.1 mJ

Operating Junction Temperature T

150 ºC

Storage Temperature Range T

STG

-55 to +150

* Limited by maximum junction temperature

Pin Definition:

1. Gate

2. Drain

3. Source

1 2 3 4 5 6 7 8 9 10

TSM15N50 1