Rainbow-electronics TSM15N15 Uživatelský manuál stáhnout pdf

TSM15N15

150V N-Channel Power MOSFET

1/4

Version: A12

TO

-

25

2

(DPAK)

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(mΩ) I

D

(A)

150 75 @ V

GS

=10V 12

Features

● Advanced Trench Technology

● Low R

DS(ON)

75mΩ (Max.)

● Low gate charge typical @ 20.9nC (Typ.)

● Low Crss typical @ 58pF (Typ.)

Block Diagram

N-Channel MOSFET

Ordering Information

Part No. Package

Packing

TSM15N15CP ROG

TO-252 2.5Kpcs / 13” Reel

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating

(Ta = 25

o

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

150 V

Gate-Source Voltage V

GS

±30 V

Continuous Drain Current

T

C

=25°C

I

D

12

A

T

C

=70°C 9

T

A

=25°C 4

T

A

=70°C 3

Drain Current-Pulsed Note 1 I

DM

30 A

Avalanche Current, L=0.1mH I

AS

, I

AR

8.2 A

Avalanche Energy, L=0.1mH E

AS

, E

AR

100 mJ

Maximum Power Dissipation

T

C

=25°C

P

D

15.6

W

T

C

=70°C 10

T

A

=25°C 2

T

A

=70°C 1.3

Storage Temperature Range T

STG

-55 to +150 °C

Operating Junction Temperature Range T

J

-55 to +150 °C

* Limited by maximum junction temperature

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case RӨ

JC

8

o

C/W

Thermal Resistance - Junction to Ambient RӨ

JA

62

o

C/W

Pin

Definition

:

1. Gate

2. Drain

3. Source

1 2 3 4

TSM15N15 1

Shrnutí obsahu

Strany 1 - TSM15N15

TSM15N15 150V N-Channel Power MOSFET

Strany 2

TSM15N15 150V N-Channel Power MOSFET

Strany 3

TSM15N15 150V N-Channel Power MOSFET

Strany 4

TSM15N15 150V N-Channel Power MOSFET

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