Rainbow-electronics MAX16832C Uživatelský manuál Strana 2

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MAX16832A/MAX16832C
2MHz, High-Brightness LED Drivers with
Integrated MOSFET and High-Side Current Sense
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN
= +24V, V
DIM
= V
IN
, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
IN, CS, LX, DIM to GND .........................................-0.3V to +70V
TEMP_I to GND .......................................................-0.3V to +6V
PGND to GND ......................................................-0.3V to +0.3V
CS to IN .................................................................-0.3V to +0.3V
Maximum Current into Any Pin
(except IN, LX, and PGND).............................................20mA
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 23.3mW/°C above +70°C)...........1860.5mW
Junction-to-Ambient Thermal Resistance (θ
JA
) (Note 1) .....43°C/W
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Pin-to-Pin ESD Ratings......................................................±2.5kV
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Voltage Range V
IN
6.5 65 V
Ground Current No switching 1.5 mA
Supply Current V
DIM
< 0.6V, V
IN
= 12V 350 µA
UNDERVOLTAGE LOCKOUT (UVLO)
V
CS
= V
IN
- 100mV, V
IN
rising until V
LX
<
0.5V
IN
6.25 6.5
Undervoltage Lockout UVLO
V
CS
= V
IN
- 100mV, V
IN
falling until V
LX
>
0.5V
IN
6.0
V
Undervoltage-Lockout Hysteresis 0.5 V
SENSE COMPARATOR
MAX16832A, V
IN
- V
CS
rising from 140mV
until V
LX
> 0.5V
IN
, V
DIM
= 5V
201 210 216
Sense Voltage Threshold High V
SNSHI
MAX16832C, V
IN
- V
CS
rising from 140mV
until V
LX
> 0.5V
IN
, V
DIM
= 5V
218 230 236
mV
MAX16832A, V
IN
- V
CS
falling from 260mV
until V
LX
< 0.5V
IN
, V
DIM
= 5V
185 190 198
Sense Voltage Threshold Low V
SNSLO
MAX16832C, V
IN
- V
CS
falling from 260mV
until V
LX
< 0.5V
IN
, V
DIM
= 5V
166 170 180
mV
Propagation Delay to Output High t
DPDH
Falling edge of V
IN
- V
CS
from 140mV to
260mV to V
LX
= 0.5V
IN
50 ns
Propagation Delay to Output Low t
DPDL
Rising edge of V
CS
- V
IN
from 260mV to
140mV to V
LX
< 0.5V
IN
50 ns
CS Input Current I
CSIN
V
IN
- V
CS
= 200mV, V
IN
= V
CS
3.5 µA
INTERNAL MOSFET
V
IN
= V
DIM
= 24V, V
CS
= 23.9V,
I
LX
= 700mA
0.45 0.9
Drain-to-Source Resistance R
DSON
V
IN
= V
DIM
= 6.0V, V
CS
= 5.9V,
I
LX
= 700mA
12
Ω
LX Leakage Current I
LX_LEAK
V
DIM
= 0V, V
LX
= 65V 10 µA
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