
DS60
2 of 4 102299
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
GND -0.3V to +6.5V
Output Current 5.0 mA
Operating Temperature -40°C to +125°C
Storage Temperature -55°C to +150°C
ESD Susceptibility (Human Body Model) 2kV
Soldering Temperature (Note 2) 215°C for 60 seconds (Vapor Phase)
220°C for 15 seconds (IR)
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at (972) 371–4448.
RECOMMENDED DC OPERATING CONDITIONS
(-40°C to +125°C; 2.7V ≤ V
DD
≤ 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage V
DD
2.7 5.5 V 1
DC ELECTRICAL CHARACTERISTICS:
Power Supply (Note 3) (-40°C to +125°C; 2.7V ≤ V
DD
≤ 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Current I
DD
80 125 µA
DC ELECTRICAL CHARACTERISTICS:
Temperature Sensor and Voltage Output (Note 3)
(-40°C to +125°C; 2.7V ≤ V
DD
≤ 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
-40°C≤T
A
≤125°C
±3
Thermometer Error T
ERR
0°C≤T
A
≤85°C
±2
°C 4
V
O
DC Offset T = 0°C 424 mV 1
Sensor Gain
∆V/∆T
6.0 6.25 6.5 mV/°C
Nonlinearity ±0.8 °C 5
2.7V≤V
DD
≤3.3V
±2.0 mV
Power Supply
Regulation
3.0V≤V
DD
≤5.5V
±0.25 mV/V
Sensor Drift ±0.25 °C 6
Output Impedance 800
Ω
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