
DS1215
032697 8/15
AC ELECTRICAL CHARACTERISTICS ROM/RAM = GND (0°C to 70°C; V
CC
= 4.5 to 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time t
RC
120 ns
CEI Access Time t
CO
100 ns
OE Access Time t
OE
100 ns
CEI to Output Low Z t
COE
10 ns
OE to Output Low Z t
OEE
10 ns
CEI to Output High Z t
OD
40 ns
OE to Output High Z t
ODO
40 ns
Read Recovery t
RR
20 ns
Write Cycle t
WC
120 ns
Write Pulse Width t
WP
100 ns
Write Recovery t
WR
20 ns 4
Data Setup t
DS
40 ns 5
Data Hold Time t
DH
10 ns 5
CEI Pulse Width t
CW
100 ns
RST Pulse Width t
RST
200 ns
CEI Propagation Delay t
PD
5 10 20 ns 2, 3
CEI High to Power–Fail t
PF
0 ns
AC ELECTRICAL CHARACTERISTICS ROM/RAM = GND (0°C to 70°C; V
CC
> 4.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Recovery at Power–Up t
REC
2 ms
V
CC
Slew Rate 4.5 – 3.0V t
F
0 ms
CAPACITANCE (t
A
= 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
5 10 pF
Output Capacitance C
OUT
5 10 pF
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